Accession Number : AD0283261

Title :   EXPERIMENTAL AND THEORETICAL INVESTIGATION OF THE ELECTRONIC PROPERTIES OF GERMANIUM SEMICONDUCTORS AT HELIUM TEMPERATURES

Corporate Author : CHICAGO UNIV ILL INST FOR THE STUDY OF METALS

Personal Author(s) : FRITZSCHE,H.

Report Date : 20 FEB 1962

Pagination or Media Count : 1

Abstract : Germanium semiconductors were prepared by transmutation-doping. In thi method, pure Ge or Ge containing a known impurity concentration is irradiated with slow neutrons. Ge70 and Ge7 capture these neutrons and transmute into Ga71AND As75, respectively, in a ratio which depends on the isotopic abundances and capture cross sections. The advantages are: the compensation ratio is accurately known; one can prepare series of samples in which either the compensation ratio is held constant and the impurity concentration varies, or the minority impurity concentration is fixed and the majority impurity concentration is varied, or the majority impurity concentration is fixed and the minority impurity concentration is varied; and the samples are homogeneous. (Author)

Descriptors :   *GERMANIUM, *IMPURITIES, CRYSTAL STRUCTURE, DEFORMATION, ELECTRICAL CONDUCTIVITY, ELECTRICAL PROPERTIES, HELIUM, LOW TEMPERATURE RESEARCH, NEUTRON REACTIONS, PIEZOELECTRIC CRYSTALS, PROCESSING, SCATTERING, SHEAR STRESSES, TEMPERATURE, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE