Accession Number : AD0283366

Title :   APPLICATIONS OF TUNNELING TO ACTIVE DIODES

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Report Date : 31 MAY 1962

Pagination or Media Count : 1

Abstract : Investigations of behavior of substitutional and interstitial Cu in intrinsic Ga s, GaSb, Si, and Ge have been conducted. Substitutional Cu is a double acceptor in GaAs, and a triple acceptor in both Ge and Si. In extrinsic n-type Ge and Si the Cu solubility increases approximately as the cube of the donor concentra ion and the diffusion coefficient decreases at a corresponding rate. In intrinsic Si, the ratio of the substitutional solubility to t at of interstitial Cu is of the order of 1/10,000 near 600 C, whereas it is approximately 6 in Ge, 30 in GaA , AND MUCH LARGER THAN THIS IN GaSb. In boron-doped Si, the solubility data indicate an energy gap decrease of 0.15 ev. The distribution coefficient of Cu in GaSb is approximately 0.002, and in GaAs approximately 0.0007. The effectiveness of Ga and KCN for the removal of Cu from GaAs and Sn was measured, and a method of removing Cu from Ga is described. Enhanced Cu solubility in p-type regions of a diffused planar structure is also exhibited. The solubilities of InSb, InAs, and InP in In, and of GaSb, GaAs, and GaP in Ga were measured and compared with a simple theory of solubility in binary systems. (Author)

Descriptors :   *DIODES, ANTIMONY ALLOYS, ARSENIDES, COPPER, CYANIDES, GALLIUM, PHOSPHIDES, POTASSIUM COMPOUNDS, SEMICONDUCTORS, SILICON, SOLUBILITY, TIN

Distribution Statement : APPROVED FOR PUBLIC RELEASE