Accession Number : AD0283367

Title :   APPLICATION OF TUNNELING TO ACTIVE DIODES

Corporate Author : GENERAL ELECTRIC CO SYRACUSE N Y

Report Date : 31 MAY 1962

Pagination or Media Count : 1

Abstract : Experimental studies of double injection (DI) negative resistance phenomena in GaAs, Si, and Ge are described. V-I characteristics, switching, trapping, and photosensitivity properties of GaAs DI diodes, fabricated by diffusion andALLOYING PROCESSES ON SEMI-INSULATING CRYSTALS AND IN OTHER CASES VIA EPITAXIAL PROCESSES, ARE PRESENTED. Similar studies and data are presente on Si DI diodes prepared via diffusion and alloying processes. Si iodes are described which are doped with various deep level impurities and which, depending upon the kind and concentration of deep level impurities, display a wide range of behavior including useful photosensitivity, switc ing, and voltage regulation properties. The properties of Ge DI diodes are mentioned briefly. A comparison is made between experimental results and current theories of double injection effects. The significance of deep level doping and possible and actual effects on epitaxial Si devices is described. The use o DI phenomena for study of deep level impurities and their properties is made apparent. (Author)

Descriptors :   *ARSENIDES, *DIODES, *GALLIUM COMPOUNDS, *GERMANIUM, *NOISE (RADIO), *SILICON, DIFFUSION, ELECTRIC INSULATION, ELECTRIC POTENTIAL, ELECTRICAL CONDUCTIVITY, EPITAXIAL GROWTH, IMPURITIES, LOW TEMPERATURE RESEARCH, MEASUREMENT, NEGATIVE RESISTANCE CIRCUITS, PHOTOSENSITIVITY, SPACE CHARGE, SWITCHING CIRCUITS, VOLTAGE REGULATORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE