Accession Number : AD0283421

Title :   INSULATED GATE FIELD EFFECT SILICON TRIODES

Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s) : SEKELY,M.E.

Report Date : 01 JUN 1962

Pagination or Media Count : 1

Abstract : IT HAS BEEN OBSERVED EXPERIMENTALLY THAT THERMALLY GROWN SILICON DIOXIDE NOT ONLY PASSIVATES THE SILICON SURFACE, BUT ALSO LEAVES A THIN N-TYPE CONDUCTING SKIN ON THE SURFACE OF INTRINSIC SILICON. A full investigation of this phenomenon is underway. (Author)

Descriptors :   *SEMICONDUCTORS, *TRANSISTORS, *TRIODES, DIOXIDES, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ELECTRICAL CONDUCTIVITY, MATHEMATICAL ANALYSIS, METAL FILMS, SILICON, SILICON COMPOUNDS, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE