Accession Number : AD0283471

Title :   HIGH FREQUENCY TUNNEL DEVICE STUDY

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s) : LAVINE,J. ; FEIST,W.

Report Date : JUN 1962

Pagination or Media Count : 1

Abstract : This report includes: Raytheon Co., Waltham, Mass. EXPERIMENTS ON THE METAL-INTERFACE AMPLIFIER, by J. M. Lavine and A. A. Iannini. 34p. incl. illus. 20 refs. Two approaches are being taken towards the development of a high frequency amplifier utilizing tunneling. The first is a olid-state thinfilm amplifier; the second utilizes a thin-film tunnel cathode as an electron source for a conventional traveling-wave amplifier. Effort on the solid-state thin-film amplifier involved the design of a high-frequency amplifier which makes use of injection directly into the space-charge region of the Ge surface-barrier diode. Feasibility studies on some phases of the fa rication were successfully carried out. Efforts on the amplifier using the tunnel cathode were concerned with methods of producing reproducible tunneling structures with a sufficiently high voltage breakdown strength. The major problem appears to be obtaining insulating films of a high degree of perfection in the extremely thin layers required for tunneling. Insulating films were prepared by thermal oxidation and by anodization. Metal films have been prepared mostly by evaporation in ultra-high vacua. (Author)

Descriptors :   *RADIOFREQUENCY AMPLIFIERS, *SEMICONDUCTORS, ALUMINUM, CLEANING, COPPER, DIODES, ELECTRIC BRIDGES, GERMANIUM, GOLD, INSULATION, MATERIALS, MANUFACTURING, OPTICAL ANALYSIS, OXIDATION, SEMICONDUCTING FILMS, SOLID STATE PHYSICS, SPACE CHARGE, THIN FILMS (STORAGE DEVICES), TRAVELING WAVE TUBES, TRIODES, VACUUM APPARATUS

Distribution Statement : APPROVED FOR PUBLIC RELEASE