Accession Number : AD0283660

Title :   500 C SILICON CARBIDE RECTIFIER PROGRAM

Corporate Author : WESTINGHOUSE ELECTRIC CORP DAYTON OHIO

Personal Author(s) : CHANG,H.C. ; CAMPBELL,R.B.

Report Date : JUL 1962

Pagination or Media Count : 1

Abstract : Silicon carbide crystals of the hexagonal type were grown in a Kroll-type furnace by the sublimation technique. Both homogeneous and grown junction crystals were prepared. To increase the yield and quality of the grown crystals, a new Kroll-type furnace was constructed and is being tested. The feasibility of vapor-phase chemical reaction methods was investigated for the controlled growth of silicon carbide platelets and sheets. The growth of junction crystals has emphasized the preparation of crystals with a high degree of perfection. The methods of rectifier fabrication are being studied. An improved metal ceramic header was tested and found to remain vacuum tight after operation at 500 C. The characteristics of two one-ampere rectifiers and a group of low current rectifiers are discussed. (Author)

Descriptors :   *CRYSTAL RECTIFIERS, *CRYSTALS, *MANUFACTURING, CARBIDES, ELECTRICAL PROPERTIES, ENCAPSULATION, GASES, GROWTH(PHYSIOLOGY), GUIDED MISSILES, HIGH TEMPERATURE, PREPARATION, PROCESSING, SATELLITES (ARTIFICIAL), SILICON COMPOUNDS, SUBLIMATION, SUPERSONIC AIRCRAFT, TEST METHODS, VACUUM FURNACES

Distribution Statement : APPROVED FOR PUBLIC RELEASE