Accession Number : AD0283836

Title :   RESEARCH INVESTIGATION OF P-I-N ELECTRON JUNCTION DETECTORS

Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF

Report Date : AUG 1962

Pagination or Media Count : 1

Abstract : The use of p-i-n junction silicon radiation detectors was examined from the point of view of their dosimetric properties. Three different modes of detector op ratio er min o as o encompass a very broad range of dose rates. By choosing the proper mode of operation, dose rates of the order of 0.1 mr/hr to a few hundred r/min can be encompassed. The wavelength dependence for x-radiation ranging in quality from 0.8 mm Al to 14 mm Cu VL h been examined for such detectors when used as current generators. Preliminary studies of secondary-emitting radiators on the wavelength characteristic were made. Response of the detector, when opera ed both as a current generator and a volt ge ource, was compared to extrapolation chamber measurements for isotopic sources emitting beta and gamma rays. The work indicates that elimination of the thick dead layer should provide improved performance and improved wav length r ponse characteristic. The preliminary data using secondary-radiation-generating materials indicates that, at least in the case of high-energy radiations, satisfactory Bragg-Gray chambers should be possible using small, spherical detectors. (Author)

Descriptors :   *DETECTORS, *RADIATION MEASURING INSTRUMENTS, ALUMINUM, BETA PARTICLES, CIRCUITS, COPPER, DIODES, DOSE RATE, DOSIMETERS, GAMMA RAYS, GEOMETRY, PULSE COUNTERS, RADIOACTIVE ISOTOPES, SEMICONDUCTORS, SENSITIVITY, SILICON, X RAYS

Distribution Statement : APPROVED FOR PUBLIC RELEASE