Accession Number : AD0284212

Title :   DEVELOPMENT OF A LOW NOISE-LOW DISTORTION TRANSISTOR

Corporate Author : MOTOROLA INC PHOENIX ARIZ

Personal Author(s) : MUSCHINSKE,JOHN E. ; RUBI,FRED A.

Report Date : 15 AUG 1962

Pagination or Media Count : 1

Abstract : The transistors used are planar passivated epitaxial silicon devices. The processes used are epitaxial deposition techniques, thermal growth of oxides, solid state diffusion, and photo-lithographic masking techniques. Silicon planar epitaxial devices were proposed to meet the noise and distortion requirements. Several types of transistors were investigated for noise and distortion performance. The approach was to attempt to first determine the significant device parameters for low noise and low distortion. The noise at 100 kc was investigated because of the facility of measurement at that frequency. Circuits using a single transistor were also investigated in the 2-32 mc frequency range. The characteristics of the device types investigated are tabulated, and the results of noise and distortion testing not directly related to the test circuit are report . (Author)

Descriptors :   *TRANSISTORS, CIRCUITS, DESIGN, EPITAXIAL GROWTH, MANUFACTURING, MEASUREMENT, MODULATION, NOISE (RADIO), PHASE DISTORTION, PROCESSING, REDUCTION, SILICON, TEST METHODS

Distribution Statement : APPROVED FOR PUBLIC RELEASE