Accession Number : AD0285306

Title :   FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Personal Author(s) : QUEISSER,HANS J.

Report Date : 09 JUL 1962

Pagination or Media Count : 1

Abstract : GRAIN BOUNDARY DIFFUSION IN SILICON WAS STUDIED. Conductivity measurements of diffused wedgeshaped structures along the boundary give information about the enhancement of the diffusion along the dislocations of the boundary. Investigations of secondary breakdown phenomena in ilicon power transstors were started. It was shown that this failure mechanism is produced by a localization of the current with a drastic temperature increase. These 'hot spots' are observed with temperature - sensitive paint and potential probing techniques. The results are in agreement with the predictions of a two-dimensional theory on lateral thermal instabilities in semiconductor devices. (Author)

Descriptors :   *DIODES, *SEMICONDUCTORS, *SILICON, *TRANSISTORS, CRYSTAL LATTICES, CRYSTAL STRUCTURE, CRYSTALS, DIFFUSION, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ELECTRICAL CONDUCTIVITY, EPITAXIAL GROWTH, FAILURE (MECHANICS), GROWTH(PHYSIOLOGY), IMPURITIES, MEASUREMENT, OXYGEN, RELIABILITY, SOLID STATE PHYSICS, TEMPERATURE

Distribution Statement : APPROVED FOR PUBLIC RELEASE