Accession Number : AD0286177

Title :   ACTIVE THIN-FILM TECHNIQUES MICROMIN PROGRAM

Corporate Author : SYLVANIA ELECTRIC PRODUCTS INC WALTHAM MASS

Report Date : 12 OCT 1962

Pagination or Media Count : 1

Abstract : A process for depositing device-quality silicon films on polycrystalline insulating substrates by vacuum evaporation of the silicon and to form diodes and transistors on these films was investigated. Previous work with hydrogen reduction of silicon tetrachloride led to the deposition of such films and devices on fluid glassy layers coating the polycrystalline substrates. The high (10 to the -9th power Torr) vacuum evaporation eq ipment including electron beam gun and power supply were designed and ordered. Further development of glaze material produced a coating which permitted the deposition of properly doped silicon films, both n- and p-type, using the reduction process for deposition. (Author)

Descriptors :   *DIODES, *SEMICONDUCTING FILMS, *THIN FILMS (STORAGE DEVICES), *TRANSISTORS, ALUMINUM COMPOUNDS, CERAMIC COATINGS, CRYSTALS, ELECTRON GUNS, EPITAXIAL GROWTH, GLASS, GROWTH(PHYSIOLOGY), IMPURITIES, MANUFACTURING, METALLIC SMOKE DEPOSITS, OXIDES, RESISTANCE (ELECTRICAL), SINGLE CRYSTALS, THERMAL EXPANSION, VACUUM APPARATUS, VAPOR PLATING, VISCOSITY

Distribution Statement : APPROVED FOR PUBLIC RELEASE