Accession Number : AD0286307

Title :   INTERDIGITATED SILICON TRANSISTOR PROGRAM

Corporate Author : TRW SEMICONDUCTORS INC LAWNDALE CALIF

Personal Author(s) : RAPPAPORT,B.

Report Date : OCT 1962

Pagination or Media Count : 1

Abstract : Work continued on manufacturing techniques and processes for silicon power transistors. A new process for the fabrication of planar structures was developed which yields high voltage breakdowns and l w collector-base reverse leakage currents. A production prototype epitaxial reactor was b ilt. Two-10 and 3-20 transistors were made by a new process in which the base predeposition layer is deposited over the entire wafer and then removed from the desired collector surface prior to the base diffusion. Development of an electrochemical polishing process is in the final stages. Construction of a production prototype epitaxial reactor was completed. A vapor deposition process for the base predeposition operation was established, and the equipment constructed. Crystal mount and lead attachment operations were developed, and the pilot equipment is under construction. A superstructure for base and emitter connections in the 4-50 and 5-100 devices was designed and tested. Voltage breakdown and current leakage tests were made. (Author)

Descriptors :   *MANUFACTURING, *SEMICONDUCTORS, *TRANSISTORS, CONTAINERS, CRYSTALS, DIFFUSION, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ELECTRODES, ELECTROLYTIC POLISHING, GASES, GROWTH(PHYSIOLOGY), HIGH FREQUENCY, HYDROGEN, MATERIALS, PROCESSING, PRODUCTION, SILICATES, SILICON, TEST EQUIPMENT, TESTS, VAPOR PLATING, VERY HIGH FREQUENCY

Distribution Statement : APPROVED FOR PUBLIC RELEASE