Accession Number : AD0286394

Title :   RESEARCH AND DEVELOPMENT OF SOLID STATE TUNNEL DEVICES AND ARRAYS CAPABLE OF OPERATION AT MICROWATT POWER LEVELS

Corporate Author : CBS LABS STAMFORD CONN

Report Date : 02 OCT 1962

Pagination or Media Count : 1

Abstract : DESCRIPTORS: *Diodes, *Semiconductors, Feasibility studies, Processing, Solid state physics, Electron beams, Voltage, Electric currents, Space charges, T eory, Evaporation, Diffusion, Chemical impurities, Probability, Aluminum, Silicon, Germanium, Gallium com pounds, Arsenides, Resistance, Electrostatic capacitance, Measurement, Alloys. Identifiers: Tunnel diodes.A survey of the present state of the theoretical research on tunnel diodes is presented Experiments aimed at forming extremely small tunnel junctions in silicon are reported. Two approaches are pursued: (1) alloying a relatively large contact area through an extremely shallow n+ layer on a p type base; (2) alloying the relatively large contact areas through small holes in an oxide mask on the silicon. (Author)

Descriptors :   *DIODES, *SEMICONDUCTORS, ALLOYS, ALUMINUM, ARSENIDES, CAPACITANCE, DIFFUSION, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ELECTRON BEAMS, EVAPORATION, FEASIBILITY STUDIES, GALLIUM COMPOUNDS, GERMANIUM, IMPURITIES, MEASUREMENT, PROBABILITY, PROCESSING, RESISTANCE (ELECTRICAL), SILICON, SOLID STATE PHYSICS, SPACE CHARGE, THEORY

Distribution Statement : APPROVED FOR PUBLIC RELEASE