Accession Number : AD0286436
Title : The Travelling Solvent Method of Crystal Growth.
Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Personal Author(s) : WEINSTEIN,M. ; AXELROD,S.D. ; MLAVSKY,A.I.
Report Date : 14 SEP 1962
Pagination or Media Count : 1
Abstract : IN AN EFFORT TO ACHIEVE A BETTER UNDERSTANDING OF THE MECHANISM OF THE Travelling Solvent Method and its use for producing p-n junctions, the system Ga-GaAs was investigated further. Work was carried out in the following areas: (1) Ga-GaAs System (p-n junction formation by solvent doping; electrical characterization of p-n junctions; and study of zone movementAS A FUNCTION OF ZONE THICKNESS AND OF A-face/Bface orientation) and (2) S IC (the Cr-SiC system to improve wetting and zone passing; and initial studies of the Si-SiC system using vapordeposited Si). (Author)
Descriptors : *ARSENIDES, *CRYSTALS, *GALLIUM COMPOUNDS, CARBIDES, CHROMIUM, GALLIUM, IMPURITIES, POLYMERS, SILICON, SILICON COMPOUNDS, SOLVENT ACTION, SURFACE ACTIVE SUBSTANCES, TEST METHODS, VAPOR PLATING, ZONE MELTING
Distribution Statement : APPROVED FOR PUBLIC RELEASE