Accession Number : AD0286642

Title :   ULTRA-PRESSURE HIGH TEMPERATURE RESEARCH: A FRONTIER IN THE QUEST FOR NEW ELECTRONIC MATERIALS

Corporate Author : ARMY RESEARCH OFFICE WASHINGTON D C

Personal Author(s) : GIARDINI,A.A. ; KOHN,J.A.

Report Date : DEC 1962

Pagination or Media Count : 1

Abstract : Research devices sustaining pressures of over 1,500,000 psi over 2500 C have been constructed. Diamond has been repeatedly synthesized, its growth mechanism deciphered, a d the synthesis of pure, electronic-grade crystals demonstrated. Cubic boron nitride, a more inert, terrestrially unknown, diamond analogue also has been prepared. Several new crystalline materials, obtained as by-products of the diamond, and boron nitride studies, are described and their significance discussed. The pressure-transmitting solid, pyrophyllite, has b en altered to the minerals kyanite and coesite, a finding of geophysical significance. Pr ssure-d pend nt data are pr sented on gallium arsenide (resistivity) and silver halides (ionic conductivity). The latter, as solid ionic cells, form practical pressure measuring devices. (Author)

Descriptors :   *INORGANIC COMPOUNDS, *SYNTHETIC STONES, ARSENIDES, BORON COMPOUNDS, CARBIDES, COBALT COMPOUNDS, CRYSTALS, DIAMONDS, ELECTRONICS, GALLIUM COMPOUNDS, GARNET, GRAPHITE, GROWTH(PHYSIOLOGY), HALIDES, HIGH PRESSURE, HIGH TEMPERATURE, IRON COMPOUNDS, MANGANESE COMPOUNDS, NITRIDES, SEMICONDUCTORS, SILVER COMPOUNDS, SINGLE CRYSTALS

Distribution Statement : APPROVED FOR PUBLIC RELEASE