Accession Number : AD0286798

Title :   RESEARCH STUDY OF HIGH-POWER HIGH-FREQUENCY SOLID STATE OSCILLATORS

Corporate Author : SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR MOUNTAIN VIEW CALIF

Personal Author(s) : SCARLETT,R.M.

Report Date : 30 JUN 1962

Pagination or Media Count : 1

Abstract : Effort was continued to investigate novel silicon devices and their application in high-frequency, high power oscillators. Information is presented on sequential oscillators employing four layer diodes or four layer three-terminal devices. The general theory of such oscillators is presented, and the results on three experimental models are reported. The three-terminal devices achieved a pulse power of 3 kw at 3 mc. On the development of four layer diodes for and circuit experiments with a push-pull oscillator circuit, symmetrical gold doped diodes produced a power output of 2 watts at 5 mc, in agreement with theory. Discussed are three layer avalanche negative resistance diodes for continuous oscillators, and a four layer three-terminal device with interdigitated emitter-base structure. A complete processing schedule is given and circuit performance reported. A single device can produce 100 kw peak pulse power and appears useful in sequential oscillator circuits, or in driving harmonic generators. A theoretical analysis is given of the pulsed-power output of transistors at high frequencies. (Author)

Descriptors :   *OSCILLATORS, *RADIOFREQUENCY OSCILLATORS, *SEMICONDUCTORS, *SOLID STATE PHYSICS, CAPACITORS, CONTAINERS, DIODES, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, MANUFACTURING, NEGATIVE RESISTANCE CIRCUITS, PULSE GENERATORS, RADIOFREQUENCY POWER, SILICON, SPACE CHARGE, SWITCHING CIRCUITS, TEMPERATURE, TESTS, TRANSISTORS, TRIGGER CIRCUITS

Distribution Statement : APPROVED FOR PUBLIC RELEASE