Accession Number : AD0286872

Title :   PRODUCTION ENGINEERING MEASURE TO IMPROVE PRODUCTION TECHNIQUES AND INCREASE THE RELIABILITY OF THE 2N1358A TRANSISTOR

Corporate Author : GENERAL MOTORS CORP KOKOMO IND DELCO RADIO DIV

Personal Author(s) : KUHNS,J.C.

Report Date : 30 JUL 1962

Pagination or Media Count : 1

Abstract : Efforts were made to improve the reliability of 2N1358A transistors by improvement of manufacturing techniqu s including equipment and process modifications, reliability tests, failure analysis and analytical-empirical surface studies. The wafer flash-etch was incorporated in the alloy area to minimize the time between etch and alloy. All of the germanium wafers for 2N1358 type transistors are currently being sliced by the internal sawing method. The major reliability problems are degradation of the collector diode due to surface contamination; emitter diode degradation due to surface defects; and high floating pote tial due to fracturing of spur regrowth at the collector periphery. The residual gas analysis has indicated on all units tested the presence of water vapor (possibly adsorbed) beyond what was exp ct d in view of the baking and dry air capping procedure in production. This, in conjunction with indications of adsorbed gas in nickel plated parts, and the results of bake-out recovery techniques on degraded collector diodes, provides clues and suggests experiments to determine corrective action for the collector diode degradation problem. ( uthor) AD-286 8729N2 +++The reliability of the 2N1358A transistor by improvement of manufacturing techniques including equipment and process modifications, reliability test, failure analysis and analytical-empirical surface study.

Descriptors :   *MANUFACTURING, *TRANSISTORS, CHEMICAL MILLING, CRYSTALS, ELECTRIC CURRENTS, GERMANIUM, GROWTH(PHYSIOLOGY), INDIUM ALLOYS, LIFE EXPECTANCY, MATERIALS, PROCESSING, RELIABILITY, SEMICONDUCTORS, TEMPERATURE, TEST EQUIPMENT, TEST METHODS, THERMAL STRESSES

Distribution Statement : APPROVED FOR PUBLIC RELEASE