Accession Number : AD0286886

Title :   SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y

Personal Author(s) : JOHNSON,S.O.

Report Date : 31 JUL 1962

Pagination or Media Count : 1

Abstract : Contents: Improved KPR resolution Contact evaporation and alloying Collector etching Boron diffusion Phosphorus diffusion Coll ctor contact to the head r Interco ections Reliability measur me t Failure a alysis

Descriptors :   *TRANSISTORS, ALLOYS, ALUMINUM ALLOYS, BORON COMPOUNDS, CHEMICAL MILLING, DIFFUSION, ELECTRIC POTENTIAL, ELECTRODES, EVAPORATION, FAILURE (MECHANICS), GASES, HEATING, HUMIDITY, HYDROGEN, INFRARED LAMPS, LIFE EXPECTANCY, MANUFACTURING, MATERIALS, NITROGEN, PHOSPHORUS, PROCESSING, RELIABILITY, SEMICONDUCTORS, SILICON, TEMPERATURE, TESTS, THERMAL STRESSES, TRANSONIC CHARACTERISTICS, VIBRATION

Distribution Statement : APPROVED FOR PUBLIC RELEASE