Accession Number : AD0287164

Title :   GALLIUM ARSENIDE VARACTOR DIODES

Descriptive Note : Quarterly rept. no. 1, 27 Jun - 27 Sep 62.

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J

Personal Author(s) : KRESSEL,H. ; LEE,H. ; SOLOMON,A.

Report Date : 31 OCT 1962

Pagination or Media Count : 31

Abstract : Emphasis was placed on fabricating very high cutoff frequency diodes having breakdown voltages in excess of 6 v. Devices were fabricated using both melt-grown GaAs and epitaxial material. The results indicate that the highest cutoff frequencies were achieved using melt grown GaAs and that the best devices fabricated have cutoff frequencies values very close to the maximum theoretical value for the material used. Twentyfive samples were completed. (Author)

Descriptors :   *DIODES, *SEMICONDUCTING FILMS, *SEMICONDUCTORS, ARSENIDES, DESIGN, ELECTRIC POTENTIAL, ELECTRICAL PROPERTIES, FAILURE (MECHANICS), GALLIUM COMPOUNDS, MANUFACTURING, MATERIALS

Distribution Statement : APPROVED FOR PUBLIC RELEASE