Accession Number : AD0287436

Title :   SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336.

Corporate Author : GENERAL ELECTRIC CO SCHENECTADY N Y

Report Date : 31 JUL 1962

Pagination or Media Count : 1

Abstract : Effort was expended towards improving production techniques on the silicon grown diffused transistor type 2N336, with a maximum failure rate of 0.01% per 1,000 hours at a 90% confidence level at 25 C. as an objective. Two key process teps were singled out to maximize process conrol. The latest processing techniques were incorporated, while minimzing process variability, and at the same time greatly increasing production capabiity. The two specific work items are: (1) Surface Passivation; and (2) High Temperature Main Sealing. (Author)

Descriptors :   *MANUFACTURING, *TRANSISTORS, DIFFUSION, MACHINES, PROCESSING, PRODUCTION, RELIABILITY, SEALS (STOPPERS), SILICON, SURFACES, TEMPERATURE, WELDING

Distribution Statement : APPROVED FOR PUBLIC RELEASE