Accession Number : AD0287463

Title :   RESEARCH AND DEVELOPMENT ON HIGH CURRENT TUNNEL DIODES

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE N J

Report Date : 30 SEP 1962

Pagination or Media Count : 1

Abstract : Device design of high-current tunnel diodes was performed for germanium, silicon, and gallium arsenide. It is concluded that ilicon is inferior to germanium and gallium arsenide, while the differences between these two are too small to elminate either one at the present time. Germanium tunnel diodes with 300-amp peak currents were fabricated with theoretical efficiencies as an inverter of up to 52%. Gallium arsenide tunnel diodes with more than 200-amp peak currents were made with efficiencies in the 4045% range. A study was made of the diode resistances and it was determined that the resistance near the junction may be a larger factor in the total resistance than the back contact resistance. Two different test circuits were built for measuring high current tunnel diodes. A discussion of some inverter circuit work being performed on another contract is also inclded. (Author)

Descriptors :   *DIODES, *INVERTER CIRCUITS, *INVERTERS, *SEMICONDUCTORS, ARSENIDES, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ELECTRICAL PROPERTIES, GALLIUM COMPOUNDS, GERMANIUM, IMPACT SHOCK, LIFE EXPECTANCY, MEASUREMENT, SHOCK RESISTANCE, SILICON, VIBRATION

Distribution Statement : APPROVED FOR PUBLIC RELEASE