Accession Number : AD0288262

Title :   500 C SILICON CARBIDE RECTIFIER PROGRAM

Corporate Author : WESTINGHOUSE ELECTRIC CORP DAYTON OHIO

Personal Author(s) : CHANG,H.C. ; CAMPBELL,R.B.

Report Date : OCT 1962

Pagination or Media Count : 1

Abstract : DESCRIPTORS: *Crystal rectifiers, *Crystals, *Manufacturing methods, Carbides, High temperature research, Silicon compounds, Sublimation, Growth, Vacuum furnaces, Labora tory furnaces, Gases, Processing, Encapsulation, Argon, Hydrogen, Tantalum alloys, Gold. Silicon carbide crystals of the hexagonal type were grown in a kroll-type furnace by the sublimation technique. Both homogeneous and grown juncion rystals were prepared. A new krolltype furnace was constructed. Preliminary runs were made yielding crystals of high purity. The growth of junction crytals has emphasized the preparation of crystals with a high degree of perfection. The methods and materials of rectifier fabrication are being studied. MBIENT EFFECTS AND ELECTRICAL CHARACTERISTICS OF RECTIFIERS ARE GIVEN. (uthor)

Descriptors :   *CRYSTAL RECTIFIERS, *CRYSTALS, *MANUFACTURING, ARGON, CARBIDES, ENCAPSULATION, GASES, GOLD, GROWTH(PHYSIOLOGY), HIGH TEMPERATURE, HYDROGEN, LABORATORY FURNACES, PROCESSING, SILICON COMPOUNDS, SUBLIMATION, TANTALUM ALLOYS, VACUUM FURNACES

Distribution Statement : APPROVED FOR PUBLIC RELEASE