Accession Number : AD0288571

Title :   MOLECULAR CIRCUIT DEVELOPMENT

Corporate Author : MELPAR INC FALLS CHURCH VA

Personal Author(s) : LAYTON,WILBUR T.

Report Date : 15 NOV 1962

Pagination or Media Count : 77

Abstract : The use of a new apparatus has resulted in obtaining both uniform films and crystallites. It was determined that intermediate substrate temperatures (1050 -1100 C) will lead to uniform silicon films if certain conditions are met. The study of the effects of post-deposition heat treatment on sputtered III-V compounds was continued. Numerous arsenide films were sputtered and their electrical properties examined. Work was begun on the sputtering of silicon carbide. The films obtained varied greatly in their properties. The thickness dependence of the dielectric constants of films of CeO2, SiO2, and Si3N4, was investigated. Films of CeO2 and SiO2 showed the dielectric anomaly. Films of numerous materials were vacuum deposited. Films of lead and cadmium sulfide, selenide and telluride, zinc oxide and sulfide, and tin oxide were formed. Many all-deposited, layered field effect devices were formed and, their characteristics determined. Significant improvement in device parameters was achieved. Voltage-amplification factors as high as 600 were obtained. Tunnel diodes were formed in silicon crystallites. (Author)

Descriptors :   *CIRCUITS, *DIELECTRIC FILMS, *MICROMETERS, *MOLECULAR ELECTRONICS, *SEMICONDUCTING FILMS, AIRFRAMES, BEARINGS, ANTIMONY ALLOYS, CADMIUM COMPOUNDS, CRYSTALS, DIELECTRIC PROPERTIES, ELECTRICAL PROPERTIES, GERMANIUM, GROWTH(PHYSIOLOGY), INDIUM COMPOUNDS, INTERMETALLIC COMPOUNDS, NITRIDES, OXIDES, PYROGENS, REFRACTORY MATERIALS, SELENIDES, SILICON COMPOUNDS, SULFIDES, TELLURIDES, TEMPERATURE, THICKNESS, THIN FILMS (STORAGE DEVICES), VACUUM APPARATUS, VAPOR PLATING

Distribution Statement : APPROVED FOR PUBLIC RELEASE