Accession Number : AD0289002

Title :   EFFECTS OF LONG TERM VACUUM ON COMMERCIAL SILICON RADIATION DETECTORS

Corporate Author : OAK RIDGE TECHNICAL ENTERPRISES CORP TENN

Personal Author(s) : WEISS,W.L. ; WHATLEY,E.M.

Report Date : AUG 1962

Pagination or Media Count : 1

Abstract : The data presented in this report are graphical representations describing the effects of long term vacuum (about 10 to the -6th power mm Hg for 6 months) on commercially available silicon radiation detectors of two types: surface barrier, which is manufactured from p-type single crystal silicon. Data include measurements of alpha resolution, dead layer or window thickness, RMS noise voltage, reverse leakage current and pulse height stability at rated voltage. In addition, the report includes a summary of radiation damage on semiconductor materials and devices. (Author)

Descriptors :   *DETECTORS, *SEMICONDUCTORS, *SILICON, CRYSTAL STRUCTURE, DIODES, ELECTRIC POTENTIAL, ELECTRICAL CONDUCTIVITY, ELECTRON IRRADIATION, LIFE EXPECTANCY, DAMAGE, RADIATION EFFECTS, SINGLE CRYSTALS, STORAGE

Distribution Statement : APPROVED FOR PUBLIC RELEASE