Accession Number : AD0289263

Title :   THEORY AND APPLICATIONS OF PIEZORESISTANCE OF DIFFUSED LAYERS IN SILICON AND GERMANIUM

Corporate Author : CARNEGIE INSTITUTION OF WASHINGTON D C*

Personal Author(s) : KERR,DONALD R.

Report Date : OCT 1962

Pagination or Media Count : 1

Abstract : . This thesis describes the piezoresistive properties of diffused layers in Si and Ge. The piezoresistive effect in uniformly-doped semiconductors with the diamond or zincblende structure is first reviewed, and published measurements on Si and Ge are given. An analysis relating electric field and sheet current components in a diffused layer under elastic strain shows that the layer is characterized by diffused piezoresistive coefficients which are functions of the orientation, the surface impurity concentration, and the type of diffused impurity profile, but are independent of the p-n junction depth. The room temperature coefficient of primary importance in strain gages is numerically calculated for Gaussian and complementary-error-function profiles in p-type diffused Si and n-type diffused Ge with surface concentrations ranging from 10 to the 17th power to 5 times 10 to the 19th power atoms per cc. (Author)

Descriptors :   *GERMANIUM, *SEMICONDUCTORS, *SILICON, ARSENIC, BORON, DEFORMATION, DIFFUSION, ELASTIC PROPERTIES, ELECTRICAL PROPERTIES, STRAIN GAGES, STRESSES, TRANSDUCERS

Distribution Statement : APPROVED FOR PUBLIC RELEASE