Accession Number : AD0289374

Title :   SEMICONDUCTOR DEVICE CONCEPTS

Corporate Author : GENERAL ELECTRIC CO SYRACUSE N Y

Report Date : 31 AUG 1962

Pagination or Media Count : 1

Abstract : Double injection diodes are described which, depending upon the kind of deep level doping impurities empolyed, exhibit instabilities and coherent and/or noisy oscillations in normally positive resistance regions of the v-i characteristics. Similar oscillations in n-type bars of Silicon compensated with certain deep level impurities are also described. The influence of deep levels on these phenomena is discussed. Some preliminary results on experiments with (As sub x P sub 1-x) light emitting junctions are presented. (Author)

Descriptors :   *DIODES, *OSCILLATION, *SEMICONDUCTORS, *SOLID STATE PHYSICS, ABRASIVE BLASTING, ANTIMONY ALLOYS, ARSENIDES, ATOMIC ENERGY LEVELS, AUDIO FREQUENCY, COBALT, EXCITATION, EXPERIMENTAL DATA, EXTREMELY LOW FREQUENCY, GALLIUM COMPOUNDS, GOLD ALLOYS, IMPURITIES, LUMINESCENCE, MAGNETIC FIELDS, NEGATIVE RESISTANCE CIRCUITS, NOISE (RADIO), RADIOFREQUENCY, RESISTANCE (ELECTRICAL), SILICON, VERY LOW FREQUENCY

Distribution Statement : APPROVED FOR PUBLIC RELEASE