Accession Number : AD0289378

Title :   HIGH VOLTAGE SILICON RECTIFIER STACKS

Corporate Author : INTERNATIONAL RECTIFIER CORP LOS ANGELES CALIF

Personal Author(s) : LUFT,WERNER

Report Date : SEP 1962

Pagination or Media Count : 1

Abstract : Design testing of the third engineering samples was started. The first unit of the fourth engineering samples was built having an internal expansion chamber, corona endshields and a lesser number of higher voltage rectifier diodes. Thermal measurements confirmed closely the original calculations of temperature rise for the rectifier stack. The reduction in the number of rectifier diodes in the fourth engineering samples reduces the temperature rise appreciably. (Author)

Descriptors :   *DIODES, *RECTIFIERS, *SEMICONDUCTORS, CAPACITORS, DESIGN, DIRECT CURRENT, ELECTRIC FIELDS, ELECTRIC POTENTIAL, ELECTRICAL CORONA, MEASUREMENT, MECHANICAL PROPERTIES, RESISTORS, SILICON, TEMPERATURE, TEST EQUIPMENT, TEST METHODS, TEST SETS

Distribution Statement : APPROVED FOR PUBLIC RELEASE