Accession Number : AD0289504
Title : RESEARCH AND DEVELOPMENT-EPITAXIAL OVERGROWTH STRUCTURES IN SILICON
Corporate Author : PHILCO CORP LANSDALE PA
Personal Author(s) : KHATCHADOURIAN, Z. ; SCHMECHEL, D.M.
Report Date : 14 JUL 1962
Pagination or Media Count : 1
Abstract : Details are provided on the preparation and delivery of wafers for the fabrication of an allepitaxial n-p-n isolation transistor. A total of twelve wafers (six monolayer, four two-layer, and two three-layer structures) were delivered. Background information is given about the epitaxial growth systems and techniques used; the bases for choice of specific approaches and processes are indicated. The methods of evaluating the epitaxial structures produced are described and evaluation results given for some specific wafer structures. (Author)
Descriptors : *SANDWICH PANELS, *SEMICONDUCTORS, *SILICON, *SOLID STATE PHYSICS, CHEMICAL MILLING, DIFFUSION, ELECTRIC POTENTIAL, ELECTRICAL CONDUCTIVITY, ELECTRODEPOSITION, EPITAXIAL GROWTH, EXPERIMENTAL DATA, HIGH TEMPERATURE, LABORATORY FURNACES, MANUFACTURING, METALLIC SMOKE DEPOSITS, OXIDATION, OXIDES, PRECISION FINISHING, RESISTANCE (ELECTRICAL), THIN FILMS (STORAGE DEVICES), TRANSISTORS, VAPOR PLATING.
Distribution Statement : APPROVED FOR PUBLIC RELEASE