Accession Number : AD0291561

Title :   SEMICONDUCTOR RESEARCH

Corporate Author : PURDUE RESEARCH FOUNDATION LAFAYETTE IND

Report Date : 30 SEP 1962

Pagination or Media Count : 1

Abstract : IN THE STUDY OF HOT CARRIER PHENOMENA, THE METHOD OF DETERMINING CARRIER DISTRIBUTION IN P-TYPE Ge by using the change of IR absorption under applied electric field appears to have been brought to a successful stage. Galvanomagnetic studies on p-type Ge, InSb, and GaSb yielded interesting results on the magneto-resistance, anisotropy, saturation with magnetic field, etc., adding to the information on the valence band. Preliminary measurements of the piezoresistance of n-type GaAs were made with the aim of determining the structure of the conduction band. In the work on the optical properties of GaSb, exciton absorption and absorption of excitonimpurity complexes were observed and studied with polarized light and with applied magnetic field. Radiation damage in silicon was investigated by studing the microwave paramagnetic resonance and the infrared absorption. Specific heat was studied on indium alloys and lead with empahsis on the superconducting state. The electronic states of the shallow acceptor impurities in Ge were calculated theoretically to improve the previous calculations. Single crystals of Ge, InSb, and GaSb semiconductors were prepared. (Author)

Descriptors :   *GALLIUM COMPOUNDS, *GERMANIUM, *INDIUM COMPOUNDS, *SEMICONDUCTORS, CRYSTALS, ELECTRICAL PROPERTIES, INTERMETALLIC COMPOUNDS, OPTICS, RADIATION EFFECTS, SINGLE CRYSTALS, TELLURIDES, TEST METHODS, ZINC COMPOUNDS

Distribution Statement : APPROVED FOR PUBLIC RELEASE