Accession Number : AD0292762

Title :   RADIATION ENHANCED DIFFUSION IN SILICON. 2. DESIGN OF A MICROCALORIMETER. STORED ENERGY MEASUREMENT IN IRRADIATED GERMANIUM. 3. STUDY OF DEFECT MOBILITY IN IRRADIATED GERMANIUM

Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE)

Personal Author(s) : PFISTER,J.C. ; BARUCH,P.

Report Date : 25 JUL 1962

Pagination or Media Count : 1

Abstract : Radiation enhanced diffusion of impurities has been studied on silicon irradiated at high temperatures (800 to 1100 C) by 250-1000 kev protons. Electrically active impurities, as shown by position of p-n junctions, diffuse faster in irradiated regions. A point defect mechanism is proposed, and a diffusion coefficient of the active defect is obtained. A cryostat and calorimeter were designed for a stored energy measurement in germanium irradiated at 20 K by 2 Mev electrons. Problems of heat transfer and insulation are discussed. Radiation induced defects have been shown, in former work, to drift in the electric field of a p-n junction, irradiated with electrons or gamma-rays. The same effect occurred with neutron irradiation. (Author)

Descriptors :   *GERMANIUM, *SEMICONDUCTORS, *SILICON, CALORIMETERS, DIFFUSION, ELECTRON IRRADIATION, ENERGY, HEAT TRANSFER, IMPURITIES, NEUTRON REACTIONS, PROTON BOMBARDMENT, SOLID STATE PHYSICS, STORAGE, TEST EQUIPMENT

Distribution Statement : APPROVED FOR PUBLIC RELEASE