Accession Number : AD0293248

Title :   MASS SPECTROGRAPHIC EVIDENCE FOR DEVIATIONS FROM STOICHIOMETRY IN GASB

Corporate Author : MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s) : OWENS,EDWARD B. ; STRAUSS,ALAN J.

Report Date : DEC 1962

Pagination or Media Count : 1

Abstract : he purest Ga b now made is p-type. At roo temperature this material contains free holes at concentrations between 1 and 2 x 10 to he 17th power per cc I order to obtain additional evidence concerning whether the acceptors are impurity atoms or la tice defects as ocia ed with deviations from toichiometry, G AS B HAS BEEN ANALYZED WITH A SPARK SOURCE MASS SPECTROGRAPH WHICH OUR CALIBRATION SHOWS TO BE CAPABLE OF DETECTING ALMOST ALL IMPURITY EL MENT WHICH ARE PRESE T A CONCENTRATIONS E CEEDING ! X !) TO THE !>TH POWER PER CC. The only elemen s detected besides Ga and Sb were: 1) Si at a concentration of 5 x 10 to he 16th power per cc or less and (2) C, O, , and N, the levels of whic were comparable to those obtained i blank runs, so that their concentration in the G ASb cannot be estimated. Of the latter elements, only carbon is likely to be a shallow acc ptor in G Sb, a m tallurgical evidence indicates that it should not b present at constant concentration in purified material. T HE NALYTICAL RESULTS THEREFORE STRONGLY INCREASE THE PROBABILITY THAT THE ACCEPTORS ARE LATTICE DEFECTS RAT ER THAN IMPURITY ATOMS. (Author)

Descriptors :   *ANTIMONY ALLOYS, *CRYSTAL STRUCTURE, *GALLIUM COMPOUNDS, CRYSTAL DEFECTS, IMPURITIES

Distribution Statement : APPROVED FOR PUBLIC RELEASE