Accession Number : AD0293854

Title :   INTEGRATION OF ENERGY STORAGE AND DISCHARGE MECHANISMS IN BULK SILICON AND GERMANIUM FOR APPLICATION TO NEURISTOR LINES

Corporate Author : STANFORD RESEARCH INST MENLO PARK CALIF

Personal Author(s) : CHAMBERS,D.R.

Report Date : OCT 1962

Pagination or Media Count : 1

Abstract : The feasibility of combining the energy storage and energy discharge mechanisms of a parallel thermistor-capacitor combination into a single structure is explored. The pertinent relations required to determine this feasibility are developed and applied to the materials silicon and germanium. It is found that the electric field strengths required to accomplish this integration of functions is critically high. Cooling the materials to below 10 K appears helpful, but the onset of impact ionization at these temperatures voids the gains made in the reduction of the required electric field strength. It is argued that thermistor materials such as silicon and germanium which derive their negative temperature coefficient of resistivity from the thermal excitation of carriers into the conduction band, appear incapable of supporting the desired integration of device functions. This does not rule out, however, structures with added energy storage or structures relying on a different mechanism for the resistance change such as superconductivity. (Author)

Descriptors :   *CAPACITORS, *SEMICONDUCTORS, *THERMISTORS, ELECTRIC FIELDS, GERMANIUM, MATHEMATICAL ANALYSIS, SILICON, SYNTHESIS, TEMPERATURE

Distribution Statement : APPROVED FOR PUBLIC RELEASE