Accession Number : AD0294657

Title :   THE MECHANISMS OF OXIDATION, AND DIFFUSION INTO THE OXIDE

Corporate Author : OHIO STATE UNIV RESEARCH FOUNDATION COLUMBUS ELECTRON DEVICE LAB

Personal Author(s) : THURSTON, M.O. ; KANG, KI DONG

Report Date : OCT 1962

Pagination or Media Count : 1

Abstract : The obj ctive of this work was to inves igate the mecha ism of the oxidation of silicon and the mechanism of the diffusion of electrically active impurities into the silicon oxide. The kinetics of silicon oxidation were investigate in pure oxygen, in air, in st am, and in air con aminated by boron or phosphorus oxide. Although the kinetics of diffusion ere investigated, the emphasis was placed on oxidation kinetics, since the diffusion phenomena are modulated by the oxidation of silicon. The network concept for silica glas was e ployed. An understanding of oxidation and diffusion proble s was sought from the defects of the oxide structure based on the experimental data. Two models were introduced for the oxidation and diffusion: oxygen defects (oxygen vacancy and non-bridging oxygen), and six-coordinated silicon cation. It w s concluded that under a constant temperature the diffusio coefficient of boron and p osphorus cations in the oxide vary according to the number and the type of defects. (Author)

Descriptors :   *OXIDES, *SILICON, *SILICON COMPOUNDS, BORON, DIFFUSION, DIODES, GLASS, IMPURITIES, MANUFACTURING, OXIDATION, PHOSPHORUS, REACTION KINETICS, SEMICONDUCTORS, SINGLE CRYSTALS, TRANSISTORS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE