Accession Number : AD0411143

Title :   DIFFUSION OF IMPURITIES INTO SILICON THROUGH AN OXIDE LAYER.

Descriptive Note : Quarterly technical rept. no. 9, 1 Jan-31 Mar 63,

Corporate Author : OHIO STATE UNIV COLUMBUS

Personal Author(s) : Thurston,M.O. ; Menon,R.B. ; Tsai,J.C.C.

Report Date : MAY 1963

Pagination or Media Count : 1

Abstract : Radioactive tracer measurements and theoretical calculations have been continued in an attempt to clarify the surface and interface conditions during diffusion of phosphorus into silicon through an oxide layer. (Author)

Descriptors :   (*SILICON, IMPURITIES), (*PHOS, DIFFUSION), SILICON COMPOUNDS, OXIDES, TRACER STUDIES, SURFACE PROPERTIES, FILMS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE