Accession Number : AD0412827
Title : MATERIAL PROCESSING AND PHENOMENA INVESTIGATIONS FOR FUNCTIONAL ELECTRONIC BLOCKS.
Descriptive Note : Interim engineering rept. no. 3, 6 Mar-6 June 63,
Corporate Author : WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA
Personal Author(s) : Angello,S.J.
Report Date : 1963
Pagination or Media Count : 56
Abstract : Full geometry control over anodic oxide growth on n-type silicon web has been achieved within the present accuracy of the opticacaace recombination velocity in silicon as a function of the impurities incorporated into an oxide film, and as a function of applied cell bias (field-effect), has become fully operational. Doped anodic oxide films have been used as localized diffusion sources without masking the rest of the silicon surface with an undoped oxide layer. Many experimental passivated functional electronic blocks (FEB's) fabricated at Westing house have been examined in the scanning electron microscope. Also examined were several inte grated semiconductor devices purchased on the open market, and several specially fabricated devices. A method has been successfully developed and demonstrated for positioning the gate elec trodes on silicon field-effect devices utilizing a feedback signal derived from the workpiece. (Author)
Descriptors : (*MATERIALS, PROCESSING), (*ELEC, ANODES), (*ELECTRON BEAMS, MANU), PHOSPHOROUS, SILICON, BORON, OXIDES, FILMS, GEOMETRY, ELECTRON, SCANNING, GATES (CIRCUITS), THICK, PHOTOGRAPHS, PRINTED CIRCUITS, MODULES, OPTICAL EQUIPMENT SEMICONDUCTOR
Distribution Statement : APPROVED FOR PUBLIC RELEASE