Accession Number : AD0412887

Title :   EVAPORATED THIN-FILM DEVICES.

Descriptive Note : Scientific Rept. no. 3, 1 Mar-31 May 63,

Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON N J

Personal Author(s) : Borkan,H. ; Shallcross,F.V. ; Waxman,A. ; Weimer,P.K.

Report Date : 10 JUN 1963

Pagination or Media Count : 23

Abstract : A glow discharge technique has been developed for improving the contact between the overlying source electrode and the cadmium sulfide in the coplanar-electrode thin-film transistor. It was demonstrated that aluminum scattered into the gap region during the source-drain evaporation was oxidized upon exposure of the completed unit to air. The effects of vacuum, air, water vapor, and other ambient gases upon unencapsulated TFT's during and after fabrication were studied. An analysis based upon the polycrystalline barrier model has been made to explain the observed de pendence of mobility upon gate bias. Control action has been observed in a coplanar insulated gate transistor using hole conduction in a cadmium telluride film. Geometric design param eters for TFT's based upon field-effect analysis were derived. (Author)

Descriptors :   (*TRANSISTORS, MATERIALS), (*SEMICONDUCTING FILMS, MANUFACTURING), HALL EFFECT, MOTION, CADMIUM COMPOUNDS, SUL, GATES (CIRCUITS), FILMS, ELECTRICAL, TELLURIDES, DESIGN, PREPARATION, GASES, ENERGY, PHOTOCONDUCTIVITY, ELECTRICAL, ELECTRIC CURRENTS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE