Accession Number : AD0414451
Title : DIELECTRIC THIN FILMS WITH INCREASED BREAKDOWN STRENGTH.
Descriptive Note : Technical rept. no. 4, 1 Dec 62-31 May 63,
Corporate Author : STANFORD RESEARCH INST MENLO PARK CA
Personal Author(s) : St John, Gilbert A. ; Chaikin, Saul W.
Report Date : 30 JUN 1963
Pagination or Media Count : 23
Abstract : Film capacitors made with vacuum-deposited thorium fluoride exhibited an average dielectric breakdown strength of 7.3 volts/1000 A in dielectric thicknesses ranging from 480 to 4335 A. Leakage current near breakdown ranged from less than 2 microamps to 5 microamps. Variations in dissipation factor (0.036 to 0.28) correlated with the ThF4 evaporation source type and with substrate temperature: radiant heating of the source produced the lowest, and elevated substrate temperature the highest, dissipation factor. Dielectric constant ranged from 8.8 to 18.4, correlating directly with dissipation factor. A yield test with SSUSiO was carried out in ten consecutive runs, each resulting in ten capacitors. All 100 capacitors, of estimated thickness 6000-7000 A, withstood a 50-v peak a-c test without dielectric breakdown even of a transient nature. A similar test with thinner SiO (approx. 1000 A) and a 10-v maximum are in progress. Of six runs completed thus far, one capacitor on one substrate shorted at 2 v and the remainder withstood 10 v. Life-test equipment was designed and constructed with no failure. (Author)
Descriptors : *CAPACITORS, *DIELECTRIC FILMS, THORIUM COMPOUNDS, FLUORIDES, MANUFACTURING, TEST METHODS, ELECTRICAL PROPERTIES, LIFE EXPECTANCY(SERVICE LIFE), DIELECTRIC PROPERTIES, DIELECTRICS, CAPACITANCE, TEST EQUIPMENT, CLEANING.
Distribution Statement : APPROVED FOR PUBLIC RELEASE