Accession Number : AD0420058

Title :   INVESTIGATIONS OF FUNDAMENTAL LIMITATIONS DETERMINING THE ULTIMATE SIZE OF MICROSTRUCTURES. THE TOPOGRAPHY AND GROWTH MECHANISM OF SILICON OVERGROWTHS,

Corporate Author : RCA LABS PRINCETON N J

Personal Author(s) : Revesz,A. G. ; Evans,R. J.

Report Date : 30 JUN 1963

Pagination or Media Count : 15

Abstract : Silicon films have been grown by chemical reaction on (111) silicon substrates. The surfaces were examined by various microscopic and interferometric methods. Surface structures are classified into two groups depending on whether the angles between the bounding planes and the (111) surface are small (less than 3 degrees) or large (greater than 10 degrees). A layer growth mechanism is postulated to explain the topography and the influence of growth parameters. (Author)

Descriptors :   (*SILICON, EPITAXIAL GROWTH), IMPURITIES, OXYGEN, SURFACE PROPERTIES, MICROSTRUCTURE, SEMICONDUCTING FILMS, FILMS, CRYSTAL STRUCTURE

Distribution Statement : APPROVED FOR PUBLIC RELEASE