Accession Number : AD0421867
Title : AN L-BAND TUNNEL DIODE OSCILLATOR.
Descriptive Note : Quarterly progress rept. no. 4, 1 Mar-31 May 63,
Corporate Author : RADIO CORP OF AMERICA HARRISON N J
Personal Author(s) : Nelson,D. E. ; Gold,R. ; Casterline,E. T.
Report Date : 31 MAY 1963
Pagination or Media Count : 17
Abstract : Recent developments in crystal growing techniques were employed to grow two highly doped GalliumArsenide crystals. Both crystals produced satisfactory tunnel diodes. Cunnel diodes were made having a ring junction geometry. Although the process worked well, the electrical parameters were not as good as hoped for. A new tunable oscillator circuit was made and tested. A power output of 26 to 30 mw was obtained over the required frequency fange. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, TUNNEL DIODES), (*TUNNEL DIODES, MICROWAVE OSCILLATORS), CRYSTAL GROWTH, TUNED CIRCUITS, L BAND, S BAND, ENVIRONMENTAL TESTS, TEMPERATURE, GALLIUM ALLOYS, ARSENIC ALLOYS
Distribution Statement : APPROVED FOR PUBLIC RELEASE