Accession Number : AD0425795
Title : COMPATIBLE ACTIVE THIN-FILM INTEGRATED STRUCTURES.
Descriptive Note : Interim scientific rept. no. 1, 15 June15 Oct 63,
Corporate Author : RCA LABS PRINCETON N J
Personal Author(s) : MUELLER,C. W.
Report Date : 15 NOV 1963
Pagination or Media Count : 27
Abstract : A literature survey is given covering work in the fields of theory of silicon growth, growth of silicon from the vapor phase, evaporation, and thin-film silicon devices. This report is concerned essentially with the first steps in the development of a thin-film integrated circuit, namely the development of the semiconductor substrate and the active device. Two methods of forming the substrate are being investigated: evaporation and pyrolysis. The evaporation technique is of interest because it is readily integrated with other production methods. After studying several methods of evaporating, direct electron-beam bombardment of silicon was adopted. Preliminary tests were made on polished quartz substrates. Best results were achieved at temperatures of 1100 C for which mobilities of 1 to 5 cm/volt-sec were measured. A flow system for the pyrolysis of silane was set up along with the desirable doping supplies and tested by growing epitaxially on silicon. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, SILICON), (*INTEGRATED CIRCUITS, FILMS), (*SILICON, CRYSTAL GROWTH), (*REVAEWS, CRYSTAL GROWTH), EPITAXIAL GROWTH, PRYOLYSIS, EVAPORATION, BIBLIOGRAPHIES, THEORY, TRANSISTORS (SEMICONDUCTOR), ELECTRON MICROSCOPY, FLUID FLOW, VACUUM APPARATUS, HIGH TEMPERATURE, ELECTRON BEAMS, TANTALUM, ELECTRICAL PROPERTIES, ELECTRON DIFFRACTION, X RAY DIFFRACTION, SILANES, ALUMINUM COMPOUNDS, OXIDES, VAPOR PLATING, BORON COMPOUNDS, NITRIDES
Distribution Statement : APPROVED FOR PUBLIC RELEASE