Accession Number : AD0426048
Title : MICROWAVE DIODE RESEARCH.
Descriptive Note : Quarterly progress rept. no. 5, 10 June9 Sep 63,
Corporate Author : BELL TELEPHONE LABS INC MURRAY HILL N J
Personal Author(s) : Fillingham,P. J. ; Irvin,J. C. ; Golightly,C. E.
Report Date : 10 DEC 1963
Pagination or Media Count : 34
Abstract : Esaki diodes have shown considerable promise as moderately low-noise microwave amplifiers. The usual amplifier specifications of noise figure, gain bandwidth, dynamic range, linearity, stability, and impedance level place strict limitations on the characteristics of the diodes employed and on the diode package as well. Gallium-antimonide Esaki diodes have been fabricated and packaged in a special low-inductance mount for microwave amplification in strip transmission line. This package has a series inductance of less than 0.5 nanohenry when it is mounted in a 50-ohm line. Resistive cutoff frequencies of 18 gc, which are deemed adequate for X-band operation, have been attained with GaSb. Additional epitaxial GaAs varactors of both the diffused and the surface barrier varieties have been fabricated. Measurements of the 5.85-gc dynamic quality factors of these units yield median values of 11.5 for the diffused and 14.5 for the surface barrier diodes. (Author)
Descriptors : (*TUNNEL DIODES, MICROWAVE AMPLIFIERS), (*VARACTOR DIODES, MICROWAVE AMPLIFIERS), EPITAXIAL GROWTH, GALLIUM ALLOYS, ARSENIC ALLOYS, X BAND, TRANSMISSION LINES, ENCAPSULATION, EQUATIONS, L BAND, ANTIMONY ALLOYS, TEMPERATURE, ENVIRONMENTAL TESTS, PARAMETRIC AMPLIFIERS, PACKAGED CIRCUITS
Distribution Statement : APPROVED FOR PUBLIC RELEASE