Accession Number : AD0426153

Title :   ELECTRONICS RESEARCH PROGRAM. INFRARED AND ULTRAVIOLET DEVICE RESEARCH.

Descriptive Note : Semiannual technical note, 1 Jan-30 June 63,

Corporate Author : AEROSPACE CORP EL SEGUNDO CALIF

Personal Author(s) : Munushian,J.

Report Date : 31 OCT 1963

Pagination or Media Count : 35

Abstract : Further work on recombination radiation and laser action in gallium arsenide diodes was carried out. Since the previous semiannual report, coherent operation of a gallium arsenide injection laser has been achieved, and spectral characteristics, efficiency, and power capability have been studied in a large number of units. A phenomenological theory, based on a study of the spectral response of recombination radiation, was developed which indicates that the radiation originates from a transition between the conduction band and a distinct zinc acceptor level. Various technological problems encountered in fabricating successful injection lasers have been explored in detail. The problem of zinc diffusion and uneven junctions has been alleviated by the use of a zinc-gallium diffusion source which permits good control over the zinc vapor pressure. Study of thermal decomposition of gallium arsenide, which can degrade the p-n junction in an injection laser, has resulted in a comprehensive picture of the nucleation and development of thermal decomposition in terms of the crystallograhic parameters of the material. An unusual effect occurring during the etching of GaAs crystals in nitric acid has been explored and found to be due to the precipitation of As2O3 onto the face of the wafer. (Author)

Descriptors :   (*GALLIUM COMPOUNDS, LASERS), DIFFUSION, ZINC, ARSENIC COMPOUNDS, INFRARED IMAGE TUBES, SEMICONDUCTORS, ETCHED CRYSTALS, MANUFACTURING

Distribution Statement : APPROVED FOR PUBLIC RELEASE