Accession Number : AD0427613

Title :   SOLID-STATE RF GENERATOR.

Descriptive Note : Quarterly progress rept. no. 2, 1 Sep-30 Nov 63,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MASS

Personal Author(s) : Collins,F. P. ; Beanland,C. J.

Report Date : 30 NOV 1963

Pagination or Media Count : 8

Abstract : The performance of the circuits described in this report represents a significant improvement over the original proposals. The achievement of over 20 watts output with only two transistors in the output stage is a major success. In fact, by selecting transistors for high breakdown voltage, it was possible to obtain over 25 watts output with a 60 volt supply. At these high power levels, the thermal design of the equipment, and in particular the transistor heat sinks, is important. This problem is best solved by using transistors which have the crystal electrically insulated but thermally bonded to the transistor case. This is true of the 2N2887 transistors used in the final stage and also of the 2N2950, used in the driver stage. The availability of the latter transistor has greatly simplified the overall driver design compared with the original proposals. (Author)

Descriptors :   (*RADIOFREQUENCY GENERATORS, SEMICONDUCTOR DEVICES), TRANSISTOR AMPLIFIERS, RADIOFREQUENCY AMPLIFIERS, POWER AMPLIFIERS, RADIOFREQUENCY OSCILLATORS, VERY HIGH FREQUENCY, TRANSISTORS

Distribution Statement : APPROVED FOR PUBLIC RELEASE