Accession Number : AD0428208

Title :   GAAS LASER MATERIALS STUDY.

Descriptive Note : Semiannual technical summary rept. no. 1, 1 June-31 Dec 63,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Turner, W. J. ; Rupprecht, H.

Report Date : 31 DEC 1963

Pagination or Media Count : 44

Abstract : Part of a program concerned with the materials aspect in the fabrication of GaAs lasers is presented. N-type crystals were prepared by horizontal Bridgman and Czochralski techniques using Si, Ge, Sn, Se and Te as dopants. No dependence of the lasing action on the specific donor was observed so far. From electrical measurements on n-type material the dominant conduction mechanism was established as a function of carrier concentration. The electrical activation energies for zinc and cadmium were deduced from Hall data. Photoluminescence measurements were used to study deep levels. Optical absorption data on laser type GaAs at 300 and 77 K were obtained. A detailed study of Zn diffusion with excess arsenic pressure was carried out. Emphasis was placed on the improvement of diffusion techniques, junction planarity, and crystal perfection in yielding low threshold lasers. The determination of the Zn diffusion coefficient under excess arsenic pressure further established that zinc diffusion is governed by an interstitial-substitutional mechanism. (Author)

Descriptors :   (*LASERS, MATERIALS), (*GALLIUM COMPOUNDS, ARSENIDES), HALL EFFECT, MEASUREMENT, CRYSTAL GROWTH, SILICON, GERMANIUM, TIN, TELLURIUM, SELENIUM, IMPURITIES, DIFFUSION, OPTICAL PROPERTIES, ABSORPTION.

Distribution Statement : APPROVED FOR PUBLIC RELEASE