Accession Number : AD0432171
Title : SELECTED EXPERIMENTS IN SILICON INTEGRATED DEVICE TECHNOLOGY.
Descriptive Note : Rept. for Jan 63-Feb 64,
Corporate Author : RESEARCH TRIANGLE INST DURHAM N C
Personal Author(s) : Burger,R. M.
Report Date : MAR 1964
Pagination or Media Count : 54
Abstract : The experimental work that was performed as supplementary investigation to the preparation of the 'Silicon Integrated Device Technology' series is presented. In addition to the five volumes of this series that were compiled, supporting experimental work was done in three areas: (1) anodic oxidation of silicon for integrated circuits; (2) statistical methods for the evaluation of laboratory processes, steam oxidation of silicon was the process considered initially; and (3) impurity diffusion into silicon from a gas source. Phosphine gas was the first impurity gas investigated. (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), ANODES, CATHODES, OXIDATION, SILICON, STATISTICAL PROCESSES, STEAM, IMPURITIES, DIFFUSION, PHOSPHINE, ELECTROLYTES, CLEANING
Distribution Statement : APPROVED FOR PUBLIC RELEASE