Accession Number : AD0432700

Title :   RESEARCH ON SEMICONDUCTOR TRANSPORT.

Descriptive Note : Final rept., 1 June 59-31 Jan 64,

Corporate Author : CLEVITE TRANSISTOR PALO ALTO CA SHOCKLEY TRANSISTOR DIV

Personal Author(s) : Hubner, K. ; Gereth, Reinhard K.

Report Date : FEB 1964

Pagination or Media Count : 119

Abstract : Transmitted phonon drag is used to study different scattering phenomena in silicon. The mean free path of the relevant thermal phonons is measured at 4.2 K in diffused npn silicon structures. At this temperature the mean free path is found to be 5000 = 1000 microns. A comparison is made between values obtained from crucible grown and epitaxial silicon. Both crystal materials with equivalent doping levels yield the same free path at 77 K. The transmitted phonon drag is proposed as a tool to study acoustic amplification of relevant thermal phonons in silicon at 77 K. These phonons have a frequency of 10 to the 12th power cps. It is shown that such high frequency phonons can interact very strongly with charge carriers via the deformation type coupling present in silicon. The fabrication of diffused 5 layer npn-pn silicon structures suitable for the amplification experiments is described. (Author)

Descriptors :   (*SEMICONDUCTORS, TRANSPORT PROPERTIES), (*TRANSPORT PROPERTIES, SEMICONDUCTORS), SEMICONDUCTOR DEVICES, LOW TEMPERATURE, SILICON, SCATTERING, DIFFUSION, PHONONS, KINETIC THEORY, DEFORMATION, EPITAXIAL GROWTH, CRYSTAL GROWTH, IMPURITIES.

Distribution Statement : APPROVED FOR PUBLIC RELEASE