Accession Number : AD0433042
Title : RADIATION DAMAGE IN SEMICONDUCTORS.
Descriptive Note : Annual summary rept. no. 2
Corporate Author : ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
Personal Author(s) : Baruch,P.
Report Date : 23 JUL 1963
Pagination or Media Count : 13
Abstract : This report describes a study of radiation enhanced diffusion in silicon. The same enhancement of diffusion as with protons is observed in electron-irradiated silicon. This conforms the point-defect mechanism proposed earlier. The proton-irradiated samples have been observed by X-ray microtopography and show a pattern of strains due to smallscale defects, but no new extended dislocations. Low temperature irradiation of Germanium is described. Stored energy measurements after a 14 K electron irradiation have been attempted, but the effect is masked by thermal phenomena accompanying the adsorption of residual gases in the calorimeter chamber. Radiation-induced defects in Silicon can drift in the electric field of a p-n junction, as in Germanium. At 288 K, there is drifting of defects with different charges, the acceptortype (negatively charged) being the slower. (Author)
Descriptors : (*SEMICONDUCTORS, DAMAGE), (*DAMAGE, SEMICONDUCTORS, (*CRYSTAL DEFECTS, SEMICONDUCTORS), SILICON, GERMANIUM, ELECTRON BEAMS, PISTON BEAMS, DIFFUSION, IMPURITIES, ENERGY, ELECTRICAL CONDUCTIVITY, INFRARED RADIATION, ABSORPTION, CRYOGENICS, HIGH TEMPERATURE, DIODES (SEMICONDUCTORS), (U)DIODES (SEMICONDUCTORS)
Distribution Statement : APPROVED FOR PUBLIC RELEASE