Accession Number : AD0435146
Title : ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Descriptive Note : Interim engineering rept. no. 3, 1 Mar-31 May 63.
Corporate Author : HP ASSOCIATES PALO ALTO CALIF
Report Date : 31 MAY 1963
Pagination or Media Count : 113
Abstract : The exploration of electro-optical effects in S I is described. Difficulties were encodntered in determining the optical absorption edge shift with electrical field. The response time of npn planar Si phototransistors was reduced to less than 1 microsec. In a search for photoconductors responsive to GaAs radiation, attention was given the Cd sub 1-x Hg sub x Se system. The work on GaAs diodes concerned zinc diffused pn junctions using both moderately and degnenerately n-type doped GaAs, as well as sulfur diffused pn junctions using cadmium doped GaAs. A major advance in the understanding of the mechanism of GaAs injection electroluminescence pinpointed the 'loss of efficiency' at room temperature to be only apparent. It was found that a spectral shift increases a hundred-fold the absorption coefficient and thus contributes to enhance selfabsorption. Optoelectric amplifiers having a current gain in excess of unity and response time of about 300 ns were constructed. All of the material synthesis and crystal growth is described. (Author)
Descriptors : (*SOLID STATE PHYSICS, *SEMICONDUCTOR DEVICES), (*MOLECULAR ELECTRONICS, SEMICONDUCTORS), PHOTOELECTRIC CELLS(SEMICONDUCTOR), LASERS, HALL EFFECT, ABSORPTION, GALLIUM ARSENIDES, ELECTROLUMINESCENCE, SEMICONDUCTOR DIODES, EPITAXIAL GROWTH, BORON COMPOUNDS, ARSENIC ALLOYS, CRYSTAL GROWTH, IMPURITIES, ELECTROLUMINESCENCE
Distribution Statement : APPROVED FOR PUBLIC RELEASE