Accession Number : AD0435434

Title :   UTILIZATION OF NEW TECHNIQUES AND DEVICES IN INTEGRATED CIRCUITS.

Descriptive Note : Quarterly rept. no. 3, 1 Nov 63-31 Jan 64.

Corporate Author : TRW SEMICONDUCTORS INC LAWNDALE CALIF

Report Date : 31 JAN 1964

Pagination or Media Count : 74

Abstract : Emphasis was on redicing the practice of necessary structuring techniques required to produce high-performance objectives, read Amplifier and write Amplifier. Final circuit work leading to improved amplifier characteristics was also undertaken. The principal processing techniques acquired were: 1/4-mil geometric spacing factor, buried-layer epitaxial construction, and thinfilm deposited resistors. These are sufficient for meeting the electrical requirements of the amplifiers. The final circuit design of the read AMPLIFIER INCORPORATES SEVERAL FEATURES WHICH INCREASES ITS VERSATILITY. The prospect of not being able to achieve a fabrication yield sufficient to build the entire read Amplifier in one chip has led to the final design. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, TRANSISTOR AMPLIFIERS), (*TRANSISTOR AMPLIFIERS, INTEGRATED CIRCUITS), PROCESSING, EPITAXIAL GROWTH, THIN FILMS (STORAGE DEVICES), GAIN, STABILITY, ELECTRIC POTENTIAL, CIRCUIT INTERCONNECTIONS, MECHANICAL DRAWINGS, DIFFUSION, CAPACITANCE, TIME, TEMPERATURE, SILICON, NOISE (RADIO), MANUFACTURING, PHOTOENGRAVING, CHEMICAL MILLING

Distribution Statement : APPROVED FOR PUBLIC RELEASE