Accession Number : AD0437938

Title :   EPITAXIAL CONTROL SYSTEM,

Corporate Author : MOTOROLA INC PHOENIX ARIZ

Personal Author(s) : Jackson,Don M. ,Jr.

Report Date : 14 DEC 1963

Pagination or Media Count : 26

Abstract : The epitaxial vapor analysis system development progressed to a point near completion. Several notable features were incorporated in the system. The new batch sampling section was breadboarded and found to operate satisfactorally. With batch sampling, gas impurity levels of 0.5 ppm were easily monitored and it is likely that 5 ppb levels can be subject to monitor. The system can be used with either linear or logarithmic ion current readout. The epitaxial gas control section neared completion. This section will allow sampling over a wide range of doping levels at various points in the gas flow system. (Author)

Descriptors :   (*EPITAXIAL GROWTH, IMPURITIES), (*IMPURITIES, MONITORS), (*GAS ANALYSIS, EPITAXIAL GROWTH), HYDROGEN, SILICON, GAS FLOW, MASS SPECTROSCOPY, SAMPLERS, CALIBRATION, CONTROL SYSTEMS, CRYSTAL GROWTH, PHOSPHORUS, ARSENIC, BORON

Distribution Statement : APPROVED FOR PUBLIC RELEASE