Accession Number : AD0442564

Title :   GALLIUM ARSENIDE SURFACE STATES,

Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s) : Kawaji, Shinji

Report Date : APR 1964

Pagination or Media Count : 9

Abstract : Pulsed field effect measurements were performed under atmospheric conditions on GaAs (111) surfaces prepared by various treatments. The results obtained with A and B (111) surfaces of n and p-type GaAs are summarized. Only the surface states with time constants between 0.00001 and 0.001 sec. could be determined under the experimental conditions used. The temperature range employed was 240 to 370 K. The density of the surface states could only be determined approximately and was found to be 10 to the 10th to 10 to the 11th power per sq cm. (Author)

Descriptors :   (*GALLIUM COMPOUNDS, SURFACE PROPERTIES), (*SURFACES, CRYSTALS), (*ARSENIDES, GALLIUM COMPOUNDS), ELECTRONS, ELECTRON TRANSITIONS, ETCHED CRYSTALS, IMPURITIES, ELECTRON DENSITY, DIFFUSION, CONDUCTIVITY, SEMICONDUCTORS.

Distribution Statement : APPROVED FOR PUBLIC RELEASE